MG100J1ZS40
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.5 V
- JESD-30 CodeR-XUFM-X5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED
- Fall Time-Max (tf)350 ns
- Number of Elements1
- Rise Time-Max (tr)600 ns
- Number of Terminals5
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)100 A
- Power Dissipation-Max (Abs)400 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max400 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MG100J1ZS40