MG100G2YS1
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 500V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Number of Elements2
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)100 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max500 V
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MG100G2YS1
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MG100G2YS1