JS8836A-AS
Toshiba Corporation
- Lifecycle statusActive
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N6
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals6
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Drain Current-Max (ID) (A)0.7
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)15
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JS8836A-AS