JS8820-AS
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N14
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyJUNCTION
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Terminals14
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Drain Current-Max (ID) (A)4
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)15
- Operating Temperature-Max (Cel)175
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JS8820-AS