JDV2S36E(TH3APN,F)
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionVariable Capacitance Diode, Very High Frequency, 46.75pF C(T), 10V, Silicon, Abrupt
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeVARIABLE CAPACITANCE DIODE
- JESD-30 CodeR-PDSO-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- Frequency BandVERY HIGH FREQUENCY
- Terminal PositionDUAL
- Number of Elements1
- Diode Cap Tolerance5.88 %
- Number of Terminals2
- Breakdown Voltage-Min10 V
- Diode Capacitance-Nom46.75 pF
- Package Body MaterialPLASTIC/EPOXY
- Diode Element MaterialSILICON
- Operating Temperature-Max125 Cel
- Diode Capacitance Ratio-Min6.3
- Variable Capacitance Diode ClassificationABRUPT
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JDV2S36E(TH3APN,F)