JDV2S29SC
Toshiba Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionVariable Capacitance Diode, Ultra High Frequency, 3.69pF C(T), 10V, Silicon, Abrupt
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeVARIABLE CAPACITANCE DIODE
- JESD-30 CodeR-XBCC-N2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- Frequency BandULTRA HIGH FREQUENCY
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Diode Element MaterialSILICON
- Diode Cap Tolerance (%)3.93
- Breakdown Voltage-Min (V)10
- Diode Capacitance-Nom (pF)3.69
- Diode Capacitance Ratio-Min2.73
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Rep Pk Reverse Voltage-Max (V)10
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Variable Capacitance Diode ClassificationABRUPT
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JDV2S29SC