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JDV2S07S

Toshiba Corporation

Toshiba Corporation JDV2S07S
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.10.00.80
  • SB Code
    8541.10.00.80
  • Diode Type
    MIXER DIODE
  • Technology
    PLANAR DOPED BARRIER
  • JESD-30 Code
    R-PDSO-F2
  • Configuration
    SINGLE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • Frequency Band
    ULTRA HIGH FREQUENCY
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    2
  • Package Body Material
    PLASTIC/EPOXY
  • Diode Element Material
    SILICON
  • Reverse Current-Max (uA)
    0.003
  • Reverse Test Voltage (V)
    10
  • Breakdown Voltage-Min (V)
    10
  • Diode Capacitance-Max (pF)
    4.9
  • Operating Temperature-Max (Cel)
    150

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JDV2S07S