JANTXVR2N7488T3 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG JANTXVR2N7488T3

Lifecycle status
Active
Description
Power Field-Effect Transistor, 18A I(D), 130V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-257AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Qualified
Terminal Position
SINGLE
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
18
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
130
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
80
Pulsed Drain Current-Max (IDM) (A)
72
Screening Level / Reference Standard
MIL-19500/705