JANTX2N6764 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG JANTX2N6764

Lifecycle status
Active
Description
Single N-Channel 100 V 0.055 Ohm 125 nC 150 W SMT Hexfet Transistor TO-3
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-P2
Configuration
Single
JEDEC-95 Code
TO-204
JESD-609 Code
e0
Package Shape
ROUND
Package Style
TO-3 (TO-204)
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Reference Standard
MIL-19500/543
Number of Terminals
2
Qualification Status
Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
38 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
150 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
150 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.065 ohm
Pulsed Drain Current-Max (IDM)
152 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
25.53 mm
Length
39.37 mm