JANSR2N7547T3 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG JANSR2N7547T3

Lifecycle status
Active
Description
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.215ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-257AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
12.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
80
DS Breakdown Voltage-Min (V)
100
Turn-off Time-Max (toff) (ns)
130
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
94
Pulsed Drain Current-Max (IDM) (A)
50
Drain-source On Resistance-Max (ohm)
0.215
Screening Level / Reference Standard
MIL-19500; RH - 100K Rad(Si)