JANSR2N7520U3C
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 21A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-CBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationQualified
- Terminal PositionBOTTOM
- Additional FeatureULTRA-LOW RESISTANCE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)21
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Avalanche Energy Rating (Eas) (mJ)110
- Pulsed Drain Current-Max (IDM) (A)84
- Drain-source On Resistance-Max (ohm)0.085
- Screening Level / Reference StandardMIL-19500
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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