JANSH2N7470T1 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG JANSH2N7470T1

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
3A001.A.1.A
ECCN Governance
EAR

JESD-30 Code
S-CSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
JESD-609 Code
e0
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Reference Standard
MIL-19500
Number of Terminals
3
Qualification Status
Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
45 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
160 ns
DS Breakdown Voltage-Min
60 V
Turn-off Time-Max (toff)
120 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
208 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
824 mJ
Drain-source On Resistance-Max
0.0066 ohm
Pulsed Drain Current-Max (IDM)
180 A