JANSF2N7262 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG JANSF2N7262

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Qualified
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
5.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Avalanche Energy Rating (Eas) (mJ)
240
Pulsed Drain Current-Max (IDM) (A)
22
Drain-source On Resistance-Max (ohm)
0.36
Screening Level / Reference Standard
MIL-19500/601