ISZ080N10NM6
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 75A I(D), 100V, 0.00804ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)100
- Drain Current-Max (ID) (A)75
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)13
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)283
- Pulsed Drain Current-Max (IDM) (A)300
- Drain-source On Resistance-Max (ohm)0.00804
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