ISP12DP06NMXTSA1 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG ISP12DP06NMXTSA1

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Trans MOSFET P-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Additional Feature
TR, 7 INCH:1000
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
4.2
Drain Current-Max (ID) (A)
2.8
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
30
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
652
Pulsed Drain Current-Max (IDM) (A)
11.2
Drain-source On Resistance-Max (ohm)
0.125
Screening Level / Reference Standard
IEC-61249-2-21