IS61DDP2B21M18A2-300M3I
Integrated Silicon Solution Inc.
- Lifecycle statusActive
- DescriptionDDR II Plus SRAM, 1MX18, 0.45ns, CMOS, PBGA165
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)15
- Length (mm)17
- JESD-30 CodeR-PBGA-B165
- Memory Width18
- Package CodeLBGA
- Output EnableNO
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR II PLUS SRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Parallel/SerialPARALLEL
- Terminal PositionBOTTOM
- Memory Organization1MX18
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.45
- Number of Words Code1M
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)1.89
- Supply Voltage-Min (V)1.71
- Supply Voltage-Nom (V)1.8
- Number of Words (words)1048576
- Standby Current-Max (A)0.32
- Standby Voltage-Min (V)1.71
- Supply Current-Max (mA)750
- Package Equivalence CodeBGA165,11X15,40
- Clock Frequency-Max (MHz)300
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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IS61DDP2B21M18A2-300M3I