IRHF7430SEPBF by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IRHF7430SEPBF

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
2.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
154
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
1.77
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED