IRHE58034 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IRHE58034

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 11.7A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CQCC-N15
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
15
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
25
Drain Current-Max (ID) (A)
11.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
87
Pulsed Drain Current-Max (IDM) (A)
46.8
Drain-source On Resistance-Max (ohm)
0.08