IRGS10B60KDPBFTRR
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Polarity/Channel TypeN-Channel
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)4000
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)294
- Collector Current-Max (IC) (A)35
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Gate-emitter Thr Voltage-Max (V)5.5
- Collector-emitter Voltage-Max (V)600
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IRGS10B60KDPBFTRR
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IRGS10B60KDPBFTRR