IRGP4660D-EPBBF
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Fall Time-Max (tf)46 ns
- Rise Time-Max (tr)56 ns
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)100 A
- Power Dissipation-Max (Abs)330 W
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max600 V
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IRGP4660D-EPBBF
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IRGP4660D-EPBBF