IRG7T10PM12Z by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IRG7T10PM12Z

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.2 V
Polarity/Channel Type
N-Channel
Turn-on Time-Nom (ton)
30000 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
880 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-40 Cel
Collector Current-Max (IC)
10 A
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
1200 V