IRG4BC20FDSTRLP by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IRG4BC20FDSTRLP

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
2
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (ns)
220
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
60
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
63
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
580
Turn-off Time-Nom (toff) (ns)
390
Collector Current-Max (IC) (A)
16
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600