IRFC460AB
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 515V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-XUUC-N
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeROUND
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Number of Elements1
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- DS Breakdown Voltage-Min515 V
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.299 ohm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IRFC460AB
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IRFC460AB