IRFBG32-002
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN OVER NICKEL
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2.1 A
- DS Breakdown Voltage-Min1000 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max6.7 ohm
- Pulsed Drain Current-Max (IDM)8.4 A
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IRFBG32-002