IRF7473PBF
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET 100V 1 N-CH HEXFET 26mOhms 61nC
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)6.9
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)140
- Pulsed Drain Current-Max (IDM) (A)55
- Drain-source On Resistance-Max (ohm)0.026
- Time@Peak Reflow Temperature-Max (s)30
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IRF7473PBF