IRF7328
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- DescriptionPower Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)8
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Pulsed Drain Current-Max (IDM) (A)32
- Drain-source On Resistance-Max (ohm)0.021
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IRF7328