IRF7307 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IRF7307

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
2
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
4.3 A
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.05 ohm
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED