IRF6665TR1PBF
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 100V 4.2A DIRECTFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XBCC-N2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)42
- Drain Current-Max (ID) (A)4.2
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)29
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Avalanche Energy Rating (Eas) (mJ)11
- Pulsed Drain Current-Max (IDM) (A)34
- Drain-source On Resistance-Max (ohm)0.062
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IRF6665TR1PBF
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IRF6665TR1PBF