IRF5M4905SCXCPBF
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 35A I(D), 55V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-XSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-254AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)125
- Drain Current-Max (ID) (A)35
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)200
- DS Breakdown Voltage-Min (V)55
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)225
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)490
- Pulsed Drain Current-Max (IDM) (A)140
- Drain-source On Resistance-Max (ohm)0.03
- Screening Level / Reference StandardMIL-19500
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IRF5M4905SCXCPBF