IQE006NE2LM5 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IQE006NE2LM5

Lifecycle status
Active
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 298A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-N8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
89
Drain Current-Max (ID) (A)
298
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Feedback Cap-Max (Crss) (pF)
195
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
140
Pulsed Drain Current-Max (IDM) (A)
1192
Drain-source On Resistance-Max (ohm)
0.0008
Screening Level / Reference Standard
IEC-61249-2-21; IEC-68-1