IPT60R055CFD7
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)236
- Drain Current-Max (ID) (A)44
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)151
- Pulsed Drain Current-Max (IDM) (A)129
- Drain-source On Resistance-Max (ohm)0.055
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IPT60R055CFD7