IPP60R520C6XKSA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 600V 8.1A TO220-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)8.1 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)153 mJ
- Drain-source On Resistance-Max0.52 ohm
- Pulsed Drain Current-Max (IDM)22 A
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IPP60R520C6XKSA1