IPP100N04S4-H2 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IPP100N04S4-H2

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
100
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
280
Pulsed Drain Current-Max (IDM) (A)
400
Drain-source On Resistance-Max (ohm)
0.0027