IPL65R340CFDAUMA2
INFINEON TECHNOLOGIES AG
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 650V 10.9A 4VSON
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PSSO-N4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)104.2
- Drain Current-Max (ID) (A)10.9
- Moisture Sensitivity Level2A
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)650
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Avalanche Energy Rating (Eas) (mJ)290
- Pulsed Drain Current-Max (IDM) (A)32
- Drain-source On Resistance-Max (ohm)0.34
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IPL65R340CFDAUMA2
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IPL65R340CFDAUMA2