IPI120N08S403AKSA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionMOSFET N-CH 80V 120A TO262-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262AA
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Additional FeatureGREEN
- Number of Elements1
- Reference StandardAEC-Q101
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)120 A
- DS Breakdown Voltage-Min80 V
- Operating Temperature-Min-55 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)920 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0028 ohm
- Pulsed Drain Current-Max (IDM)480 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IPI120N08S403AKSA1