IPI100N06S3-04
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 55V 100A TO262-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)214
- Drain Current-Max (ID) (A)100
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)55
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)450
- Pulsed Drain Current-Max (IDM) (A)400
- Drain-source On Resistance-Max (ohm)0.0044
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IPI100N06S3-04