IPF009N04NF2S by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IPF009N04NF2S

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 302A I(D), 40V, 0.0009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
375
Drain Current-Max (ID) (A)
302
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
272
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
1112
Pulsed Drain Current-Max (IDM) (A)
1208
Drain-source On Resistance-Max (ohm)
0.0009
Screening Level / Reference Standard
IEC61249-2-21