IPD70R600P7S by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IPD70R600P7S

Lifecycle status
Active
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 8.5A I(D), 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
43.1
Drain Current-Max (ID) (A)
8.5
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
700
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Pulsed Drain Current-Max (IDM) (A)
5
Drain-source On Resistance-Max (ohm)
0.6
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED