IPD16CNE8NG
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 85V 53A TO252-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)100
- Drain Current-Max (ID) (A)53
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)85
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)107
- Pulsed Drain Current-Max (IDM) (A)212
- Drain-source On Resistance-Max (ohm)0.016
0 suppliers available to buy or to bid for IPD16CNE8NG
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
IPD16CNE8NG