IPB80N06S2H5ATMA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionMOSFET N-CH 55V 80A TO263-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)80
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)55
- Avalanche Energy Rating (Eas) (mJ)700
- Pulsed Drain Current-Max (IDM) (A)320
- Drain-source On Resistance-Max (ohm)0.0052
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IPB80N06S2H5ATMA1