IPB240N04S4-R9
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 240A I(D), 40V, 0.00087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Additional FeatureULTRA LOW RESISTANCE
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)240
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Avalanche Energy Rating (Eas) (mJ)750
- Pulsed Drain Current-Max (IDM) (A)960
- Drain-source On Resistance-Max (ohm)0.00087
- Screening Level / Reference StandardAEC-Q101
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IPB240N04S4-R9