INFINEON TECHNOLOGIES AG IKD08N65ET6
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max (V)
    1.9
  • Polarity/Channel Type
    N-Channel
  • Power Dissipation-Max (W)
    47
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Turn-on Time-Nom (ton) (ns)
    30
  • Gate-emitter Voltage-Max (V)
    20
  • Turn-off Time-Nom (toff) (ns)
    147
  • Collector Current-Max (IC) (A)
    15
  • Operating Temperature-Max (Cel)
    175
  • Operating Temperature-Min (Cel)
    -40
  • Gate-emitter Thr Voltage-Max (V)
    6.4
  • Collector-emitter Voltage-Max (V)
    650

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IKD08N65ET6
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IKD08N65ET6