IKB03N120H2-E3045A by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IKB03N120H2-E3045A

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
62.5
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
16.1
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
403
Collector Current-Max (IC) (A)
9.6
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
3.9
Collector-emitter Voltage-Max (V)
1200