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IGC99T120T8RMX1SA3

INFINEON TECHNOLOGIES AG

INFINEON TECHNOLOGIES AG IGC99T120T8RMX1SA3
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max (V)
    1.97
  • Polarity/Channel Type
    N-Channel
  • Transistor Element Material
    SILICON
  • Gate-emitter Voltage-Max (V)
    20
  • Operating Temperature-Max (Cel)
    175
  • Operating Temperature-Min (Cel)
    -40
  • Gate-emitter Thr Voltage-Max (V)
    6.4
  • Collector-emitter Voltage-Max (V)
    1200

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IGC99T120T8RMX1SA3
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IGC99T120T8RMX1SA3