IGC82T170S8RMX1SA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 1700V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.2 V
- Polarity/Channel TypeN-Channel
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-40 Cel
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.4 V
- Collector-emitter Voltage-Max1700 V
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IGC82T170S8RMX1SA1