INFINEON TECHNOLOGIES AG IGC10T65QE
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max (V)
    2.32
  • Polarity/Channel Type
    N-Channel
  • Transistor Element Material
    SILICON
  • Gate-emitter Voltage-Max (V)
    20
  • Operating Temperature-Max (Cel)
    175
  • Operating Temperature-Min (Cel)
    -40
  • Gate-emitter Thr Voltage-Max (V)
    5.6
  • Collector-emitter Voltage-Max (V)
    650

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IGC10T65QE
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IGC10T65QE