IFS75B12N3E4B39BOSA1 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IFS75B12N3E4B39BOSA1

Lifecycle status
Active
Description
Insulated Gate Bipolar Transistor, 1200V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
2.15
Case Connection
ISOLATED
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
385
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
185
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
570
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
1200