HN9C15FT
Toshiba Corporation
- Lifecycle statusActive
- DescriptionRF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)50
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.04
- Operating Temperature-Max (Cel)125
- Collector-emitter Voltage-Max (V)8
- Transition Frequency-Nom (fT) (MHz)10000
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HN9C15FT