HN3C13F
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements2
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)80
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)0.03 A
- Power Dissipation-Max (Abs)0.3 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max10 V
- Transition Frequency-Nom (fT)6000 MHz
- Collector-base Capacitance-Max0.95 pF
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HN3C13F
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HN3C13F