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HN1V01H-B

Toshiba Corporation

Toshiba Corporation HN1V01H-B
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.10.00.80
  • SB Code
    8541.10.00.80
  • Diode Type
    VARIABLE CAPACITANCE DIODE
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    2 BANKS, COMMON CATHODE, 2 ELEMENTS
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e0
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Additional Feature
    CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES
  • Number of Elements
    4
  • Quality Factor-Min
    200
  • Number of Terminals
    8
  • Package Body Material
    PLASTIC/EPOXY
  • Diode Element Material
    SILICON
  • Diode Cap Tolerance (%)
    8.76
  • Reverse Current-Max (uA)
    0.02
  • Reverse Test Voltage (V)
    16
  • Breakdown Voltage-Min (V)
    16
  • Diode Capacitance-Nom (pF)
    487.5
  • Diode Capacitance Ratio-Min
    16.2
  • Rep Pk Reverse Voltage-Max (V)
    16
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Variable Capacitance Diode Classification
    ABRUPT

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HN1V01H-B
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HN1V01H-B